| PART |
Description |
Maker |
| MT6L61AE |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MS1261 |
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 15; P(in) (W): 1; Gain (dB): 12; Vcc (V): 12.5; Cob (pF): 45; fO (MHz): 0; Case Style: M122 UHF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
Microsemi, Corp.
Advanced Power Technology
|
| VMB10-12F |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator VHF BAND, Si, NPN, RF POWER TRANSISTOR
NPN SILICON RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
|
| MRF553 |
VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| SD1214-12 SD1212-02 |
RF & MICROWAVE TRANSISTORS 130...230MHz FM MOBILE APPLICATIONS VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| 2SC1324 |
MITSUBISHI RF POWER TRANSISTOR
NPN EPITAXIAL PLANAR TYPE(BROADBAND AMPLIFIERS FROM VHF TO UHF BAND)
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 2SC2094 SC2094 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in VHF band Mobile radio applications)
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SC1970 SC1970 |
From old datasheet system
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SC2056 SC2056 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in VHF band portable or hand-held radio applications)
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
